Industry Odisha Bureau, Sept 17: RIR Power Electronics has completed the installation of Silicon Carbide (SiC) epitaxial wafer manufacturing reactors at its semiconductor facility in Bhubaneswar, Odisha. This has marked a key step in its plan to establish a vertically integrated SiC semiconductor production facility.
The readiness of the facility was witnessed on Wednesday, September 16, by Odisha Additional Chief Secretary Vishal Dev. Notably, he was also accompanied by senior government officials. The company said key equipment for SiC epitaxial wafer manufacturing has been installed. This is along with power connections, utilities and supporting infrastructure.
Commercial production is expected to begin after the completion of the remaining statutory and regulatory formalities. RIR Power Electronics plans to manufacture SiC epitaxial wafers for domestic and international markets. This will be as part of the facility’s phased development.
The reactors and associated infrastructure are part of the company’s planned Rs 618 crore investment. This is in order to develop a vertically integrated SiC semiconductor manufacturing ecosystem in Odisha.
The facility is also planning to manufacture SiC-based power semiconductor devices, including high power MOSFETs, diodes and modules. Notably, these products can be used across electric mobility, renewable energy, energy storage, railways, aerospace, defence, data centres, industrial power electronics, and automation.
Further, SiC technology offers advantages such as higher energy efficiency, lower power losses, greater power handling capability and improved performance at high operating temperatures.
RIR Power Electronics is following a “Silicon Carbide to System” approach. The planned value chain will extend from epitaxial wafer manufacturing to power semiconductor devices.
The company said the project will strengthen domestic semiconductor manufacturing capabilities and contribute to Odisha’s development as a semiconductor manufacturing hub.
